Real-time measurements of stress relaxation in InGaAs/GaAs
Identifieur interne : 012071 ( Main/Repository ); précédent : 012070; suivant : 012072Real-time measurements of stress relaxation in InGaAs/GaAs
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Abstract
Real-time observations of the film stress-thickness product are presented from the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 and 520°C were used with a nominal In composition of x=0.20. The data are compared with a model of relaxation kinetics based on dislocation glide velocity. The residual strain is higher than predicted and the relaxation is not markedly temperature dependent, in contrast to the model. These discrepancies suggest that dislocation blocking causes incomplete relaxation in this material system. © 2000 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Real-time measurements of stress relaxation in InGaAs/GaAs</title><author><name sortKey="Beresford, R" uniqKey="Beresford R">R. Beresford</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Yin, J" uniqKey="Yin J">J. Yin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Tetz, K" uniqKey="Tetz K">K. Tetz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Chason, E" uniqKey="Chason E">E. Chason</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0245788</idno><date when="2000-05">2000-05</date><idno type="stanalyst">PASCAL 00-0245788 AIP</idno><idno type="RBID">Pascal:00-0245788</idno><idno type="wicri:Area/Main/Corpus">013090</idno><idno type="wicri:Area/Main/Repository">012071</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dislocations</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heterojunctions</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Indium compounds</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Slip</term><term>Strains</term><term>Stress relaxation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6240</term><term>6860B</term><term>6172H</term><term>Etude expérimentale</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Relaxation contrainte</term><term>Dislocation</term><term>Déformation mécanique</term><term>Hétérojonction</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term><term>Glissement</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Real-time observations of the film stress-thickness product are presented from the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 and 520°C were used with a nominal In composition of x=0.20. The data are compared with a model of relaxation kinetics based on dislocation glide velocity. The residual strain is higher than predicted and the relaxation is not markedly temperature dependent, in contrast to the model. These discrepancies suggest that dislocation blocking causes incomplete relaxation in this material system. © 2000 American Vacuum Society.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>18</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Real-time measurements of stress relaxation in InGaAs/GaAs</s1></fA08><fA11 i1="01" i2="1"><s1>BERESFORD (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>YIN (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>TETZ (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHASON (E.)</s1></fA11><fA14 i1="01"><s1>Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1431-1434</s1></fA20><fA21><s1>2000-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0245788</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Real-time observations of the film stress-thickness product are presented from the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 and 520°C were used with a nominal In composition of x=0.20. The data are compared with a model of relaxation kinetics based on dislocation glide velocity. The residual strain is higher than predicted and the relaxation is not markedly temperature dependent, in contrast to the model. These discrepancies suggest that dislocation blocking causes incomplete relaxation in this material system. © 2000 American Vacuum Society.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60B40</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H60B</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A72H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6240</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6860B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6172H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Relaxation contrainte</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Stress relaxation</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dislocation</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Dislocations</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Déformation mécanique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Strains</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérojonction</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heterojunctions</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Glissement</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Slip</s0></fC03><fN21><s1>164</s1></fN21><fN47 i1="01" i2="1"><s0>0023M000525</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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